Ion beam sputtering induced ripple formation in thin metal films

Point defects in Sc2O3 thin films by ion beam sputtering.

We show that the concentration of oxygen interstitials trapped in Sc2O3 films by ion beam sputtering from metal targets can be controlled by modifying deposition conditions. We have identified point defects in the form of oxygen interstitials that are present in Sc2O3 films, in significantly high concentrations, i.e., ∼10(18)  cm(-3). These results show a correlation between the increase of oxy...

Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

7--s thin films grown in situ by sequential ion beam sputtering

We have analyzed epitaxial, c-axis oriented YBa,CujO, _ 6 thin films grown in situ by sequential ion-beam sputtering on (100) SiTiOs and (100) MgO substrates. X-ray diffraction studies showed the presence of both homogeneous and inhomogeneous lattice distortions along the c-direction. The c-axis lattice parameters ranged from 11.72 to 12.00 A. The broadening of the (001) Bragg peaks in excess o...

Focused ion beam induced deflections of freestanding thin films.

Prominent deflections are shown to occur in freestanding silicon nitride thin membranes when exposed to a 50 keV gallium focused ion beam for ion doses between 10(14) and 10(17) ions/cm(2). Atomic force microscope topographs were used to quantify elevations on the irradiated side and corresponding depressions of comparable magnitude on the back side, thus indicating that what at first appeared ...

Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si

Ion beam sputtering of ultrathin film Au coatings used as a physical catalyst for self-organization of Si nanostructures has been achieved by tuning the incident particle energy. This approach holds promise as a scalable nanomanufacturing parallel processing alternative to candidate nanolithography techniques. Structures of 11- to 14-nm Si nanodots are formed with normal incidence low-energy Ar...